IXFN120N20
quality SOT-227B MOSFETs ROHS
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $88.805 | $88.80 |
| 200 | $35.433 | $7,086.60 |
| 500 | $34.250 | $17,125.00 |
| 1000 | $33.664 | $33,664.00 |
在庫：5,350
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFN120N20
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFN120N20 データシート (PDF)
概要 IXFN120N20
Introducing the IXFN120N20, a standout product from the N-Channel HiPerFET™ Standard series. Designed for superior performance in power MOSFET applications, this series is known for its low gate charge and exceptional ruggedness, making it suitable for both hard switching and resonant mode applications. The fast intrinsic diode further enhances efficiency, providing a reliable solution for industrial applications. With a range of standard packages available, including isolated types, the HiPerFET™ Standard series offers flexibility and convenience for integration into various systems
主な特長
- Silicon Valley Originated
- High Current Handling Capability
- Achieve High Power Density
応用
- Long-lasting durability
- High-quality construction
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.017 |
| Continuous Drain Current @ 25 ℃ (A) | 120 | Gate Charge (nC) | 360 |
| Input Capacitance, CISS (pF) | 9100 | Thermal resistance [junction-case] (K/W) | 0.22 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 568 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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