IXFN120N65X2
Details: The IXFN120N65X2 is a MOSFET device featuring an N-Type channel, capable of handling up to 650 Volts and 108 Amperes
在庫:9,102
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部品番号 : IXFN120N65X2
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パッケージ/ケース : SOT-227-4
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFN120N65X2 データシート (PDF)
概要 IXFN120N65X2
The IXFN120N65X2 product represents a revolutionary leap in MOSFET technology, showcasing unparalleled performance attributes. By harnessing the power of the charge compensation principle and proprietary process technology, these devices offer industry-leading on-state resistances, low gate charges, and exceptional dv/dt performance. Their rugged avalanche capability ensures reliability in harsh operating conditions, while the fast soft-recovery body diode minimizes switching losses and mitigates electromagnetic interference, enhancing overall efficiency and performance
主な特長
- High power handling capacity
- Wide input voltage range
- High efficiency and reliability
- Safe and secure switching
応用
- Cutting-edge energy inverters
- Intelligent PFC circuits
- Dynamic servo control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Ultra X2 | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 108A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 54A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 15500 pF @ 25 V | Power Dissipation (Max) | 890W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN120 |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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