IXFN210N30X3
High Voltage Transistor
在庫:7,619
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部品番号 : IXFN210N30X3
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パッケージ/ケース : SOT-227-4
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFN210N30X3 データシート (PDF)
概要 IXFN210N30X3
Featuring low reverse recovery charge and time, the body diodes of the IXFN210N30X3 are designed to efficiently dissipate leftover energies during high-speed switching, reducing the risk of device failure and enhancing overall efficiency. Additionally, these MOSFETs are avalanche capable, offering superior dv/dt performance to withstand voltage spikes and prevent accidental turn-on of parasitic bipolar transistors
主な特長
- High current handling capacity
- Rapid recovery time
- Voltage regulation
- Soft start capability
応用
- Precision voltage regulation
- Flexible design options
- Enhanced efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Ultra X3 | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
Current - Continuous Drain (Id) @ 25°C | 210A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 105A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 24200 pF @ 25 V | Power Dissipation (Max) | 695W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN210 |
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部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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