IXFN32N120
Silicon N-channel Transistor MOSFET with 1.2KV voltage rating, 32A current rating, and 4-pin SOT-227B package
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $41.940 | $41.94 |
200 | $16.230 | $3,246.00 |
500 | $15.660 | $7,830.00 |
1000 | $15.378 | $15,378.00 |
在庫:7,010
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFN32N120
-
パッケージ/ケース : SOT-227-4
-
ブランド : IXYS
-
コンポーネントのカテゴリ : Single FETs, MOSFETs
-
日付シート : IXFN32N120 データシート (PDF)
概要 IXFN32N120
Featuring the IXFN32N120 Power MOSFET, the N-Channel HiPerFET™ Standard series delivers top-notch quality and efficiency for demanding applications. These MOSFETs are optimized for both hard switching and resonant mode scenarios, offering low gate charge and robust construction with a rapid intrinsic diode. With a strong emphasis on durability and performance, this series is ideal for industrial applications where reliability is crucial. Furthermore, the availability of various standard industrial packages, including isolated types, enhances the versatility and usability of these Power MOSFETs
主な特長
- High Power Density Design
- Improved Thermal Management
- Fast Switching Speed
- Avalanche Rated JFET Structure
応用
- Robust design
- Long lifespan
- Versatile functionality
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™ | Package | Box |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 32A | Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA | Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 15900 pF @ 25 V | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN32 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXFH16N50P
N-MOSFET transistor with Polar™ technology, unipolar, capable of handling 500V and 16A, with a power dissipation of 300W, packaged in TO247-3
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
IXTA120P065T
Transistor MOSFET for P-channel applications with 65V voltage rating and 120A current rating in a 3-pin D2PAK package
IXFP76N15T2
Low on-resistance of 0.02ohm