IXFN32N120P
IXFN32N120P High-Power N-Channel Transistor with 32A Current Rating
在庫:5,571
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFN32N120P
-
パッケージ/ケース : SOT-227-4
-
ブランド : IXYS
-
コンポーネントのカテゴリ : Single FETs, MOSFETs
-
日付シート : IXFN32N120P データシート (PDF)
概要 IXFN32N120P
Elevate your system performance with the IXFN32N120P HiPerFETs from Polar™, engineered to deliver exceptional efficiency and reliability in demanding applications such as phase-shift bridges motor control and UPS systems. Featuring a faster body diode with reduced reverse recovery time (trr), these FETs enhance overall system performance and efficiency. With the lowest RDS(on) in their class, along with low RthJC and low Qg values, these FETs offer superior power dissipation capabilities and advanced thermal management. The enhanced DV/DT capability further underscores the versatility and reliability of the HiPerFET family, making them the ideal choice for high-power applications where precision and efficiency are essential
主な特長
- Low ESR Ceramic Capacitors
- Improved Thermal Performance
- Miniature Leadframe
- Rapid Self-Recovery
応用
- Robust Power Transistors
- Superior Thermal Performance
- Flexible Power Designs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 310mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 21000 pF @ 25 V | Power Dissipation (Max) | 1000W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN32 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXFH16N50P](/img/package/to247.jpg)
IXFH16N50P
N-MOSFET transistor with Polar™ technology, unipolar, capable of handling 500V and 16A, with a power dissipation of 300W, packaged in TO247-3
![IXXH50N60C3D1](/img/package/to247.jpg)
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
![IXTA120P065T](/img/package/d2pak3.jpg)
IXTA120P065T
Transistor MOSFET for P-channel applications with 65V voltage rating and 120A current rating in a 3-pin D2PAK package
![IXFP76N15T2](/img/package/to220.jpg)
IXFP76N15T2
Low on-resistance of 0.02ohm