IXFN38N100P
1kV N-channel MOSFET with 38A current rating and 210mΩ resistance at 10V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $21.777 | $21.78 |
10 | $20.945 | $209.45 |
30 | $19.504 | $585.12 |
100 | $18.248 | $1,824.80 |
在庫:8,780
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFN38N100P
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パッケージ/ケース : SOT-227-4
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFN38N100P データシート (PDF)
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Series : IXFN38N100
概要 IXFN38N100P
The Polar HiPerFETs family, IXFN38N100P being one such product, has taken the strengths of the Polar Standard family and amplified them to create faster body diodes. This enhancement allows for reduced reverse recovery time (trr), making them suitable for demanding applications like phase-shift bridges motor control and uninterruptible power supply (UPS)
主な特長
- This product has been extensively tested and validated in various applications.
- Its low on-resistance makes it suitable for high-frequency applications.
- The IXFN38N100P offers high voltage insulation and low leakage current.
応用
- Flexible power systems
- Cost-effective power solutions
- Power electronics expertise
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 210mOhm @ 19A, 10V | Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 24000 pF @ 25 V | Power Dissipation (Max) | 1000W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN38 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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