IXFN50N80Q2
Power Field-Effect Transistor with 50A I(D) and 800V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $34.275 | $34.28 |
30 | $33.088 | $992.64 |
在庫:8,747
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFN50N80Q2
-
パッケージ/ケース : SOT-227-4
-
ブランド : IXYS
-
コンポーネントのカテゴリ : Single FETs, MOSFETs
-
日付シート : IXFN50N80Q2 データシート (PDF)
概要 IXFN50N80Q2
When it comes to package type, the IXFN50N80Q2 comes in a TO-268 package, known for its surface mount capability and widespread use in the industry. This package type, also referred to as D2Pak or D3Pak, provides a convenient and reliable mounting solution for the power MOSFET, allowing for easy integration into various circuit designs
主な特長
- The IXFN50N80Q2 is designed for high-power applications requiring fast switching
- It features low on-state resistance and a voltage rating of 800V
- Suitable for power supplies, motor control and high-frequency applications
応用
- Perfect for switching circuits
- Provides effective power management
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Discrete Semiconductor Modules | RoHS | Details |
Product | Power MOSFET Modules | Technology | Si |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Chassis Mount |
Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | IXYS |
Configuration | Single | Fall Time | 13 ns |
Height | 9.6 mm | Id - Continuous Drain Current | 50 A |
Length | 38.23 mm | Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.135 kW | Product Type | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance | 150 mOhms | Rise Time | 25 ns |
Factory Pack Quantity | 10 | Subcategory | Discrete Semiconductor Modules |
Tradename | HiPerFET | Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 26 ns |
Vds - Drain-Source Breakdown Voltage | 800 V | Width | 25.42 mm |
Unit Weight | 1.058219 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXFH16N50P](/img/package/to247.jpg)
IXFH16N50P
N-MOSFET transistor with Polar™ technology, unipolar, capable of handling 500V and 16A, with a power dissipation of 300W, packaged in TO247-3
![IXXH50N60C3D1](/img/package/to247.jpg)
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
![IXTA120P065T](/img/package/d2pak3.jpg)
IXTA120P065T
Transistor MOSFET for P-channel applications with 65V voltage rating and 120A current rating in a 3-pin D2PAK package
![IXFP76N15T2](/img/package/to220.jpg)
IXFP76N15T2
Low on-resistance of 0.02ohm