IXFN55N50F
500V IXFN55N50F
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部品番号 : IXFN55N50F
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFN55N50F データシート (PDF)
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Series : HIPERFET™, F CLASS
概要 IXFN55N50F
N-Channel 500 V 55A (Tc) 600W (Tc) Chassis Mount SOT-227B
主な特長
- F-Class: MegaHertz Switching
- N-Channel Enhancement Mode
- Avalanche Rated, Low Qg, Low Intrinsic Rg
- High dV/dt, Low trr
- Features
- RF capable Mosfets
- Rugged polysilicon gate cell structure
- Double metal process for low gate
- resistance
- Unclamped Inductive Switching (UIS)
- rated
- Low package inductance
- - easy to drive and to protect
- Fast intrinsic rectifier
- Applications
- DC-DC converters
- Switched-mode and resonant-mode
- power supplies,>500kHz switching
- DC choppers
- Pulse generation
- Laser drivers
- Advantages
- Easy to mount
- Space savings
- High power density
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, F Class | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 27.5A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V | Power Dissipation (Max) | 600W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | IXFN55 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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