IXFN70N60Q2
Description of IXFN70N60Q2 product: SOT-227B MOSFETs with RoHS certification
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $80.123 | $80.12 |
200 | $31.970 | $6,394.00 |
500 | $30.902 | $15,451.00 |
1000 | $30.374 | $30,374.00 |
在庫:9,198
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFN70N60Q2
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFN70N60Q2 データシート (PDF)
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Series : IXFN70N60
概要 IXFN70N60Q2
N-Channel 600 V 70A (Tc) 890W (Tc) Chassis Mount SOT-227B
主な特長
- International standard packages
- JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification
- miniBLOC with Aluminium nitride isolation
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Q2 Class | Package | Tube |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80mOhm @ 35A, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V | Power Dissipation (Max) | 890W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN70 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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