IXFP5N100PM
Trans MOSFET N-CH 1KV 2.3A 3-Pin(3+Tab) TO-220FP
在庫:7,269
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部品番号 : IXFP5N100PM
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パッケージ/ケース : TO-220FP-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXFP5N100PM データシート (PDF)
概要 IXFP5N100PM
When it comes to power semiconductor devices, the Polar™ HiPerFETs (IXF..) are in a league of their own. Their unique combination of features, including low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, sets them apart from other products on the market. With a focus on optimizing performance and minimizing power losses, the IXFP5N100PM represents the pinnacle of power semiconductor technology, offering unparalleled benefits for both manufacturers and end-users
主な特長
- Overvoltage Protection
- Temperature Compensation
- Soft Recovery Performance
応用
- Customized Power Modules
- Adaptive Battery Management
- Sophisticated Motor Control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | IXYS | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220FP-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 1 kV | Id - Continuous Drain Current | 2.3 A |
Rds On - Drain-Source Resistance | 2.8 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 33.4 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 42 W | Channel Mode | Enhancement |
Tradename | HiPerFET | Series | HiPerFET |
Brand | IXYS | Configuration | Single |
Fall Time | 37 ns | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 30 ns | Typical Turn-On Delay Time | 12 ns |
Unit Weight | 0.068784 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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