IXFR80N50P
HIPERFET THT MOSFET capable of dissipating 45A current at 500V voltage in an ISOPLUS247 package
在庫:7,992
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- 365日の品質保証
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部品番号 : IXFR80N50P
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFR80N50P データシート (PDF)
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Series : IXFR80N50
概要 IXFR80N50P
The Polar™ HiPerFETs (IXF..) offer a unique blend of features that make them ideal for a variety of applications requiring high performance and efficiency. With a faster body diode that reduces reverse recovery time (trr), these FETs are perfect for phase-shift bridges, motor control, and UPS systems. The low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability set them apart from other products on the market, ensuring optimal performance and reliability in any application where they are used
主な特長
- Compact Design
- Low Capacitance
- Fast Response Time
- Space Saving
応用
- Energy-Saving Switch Mode
- Industrial Grade PSU
- Precision Control System
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 72mOhm @ 40A, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 197 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 12700 pF @ 25 V | Power Dissipation (Max) | 360W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS247™ | Package / Case | TO-247-3 |
Base Product Number | IXFR80 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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