IXKH47N60C
The product IXKH47N60C is a Power FET, capable of handling currents up to 47A and voltages up to 600V, with an on-resistance of 0
在庫:5,045
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXKH47N60C
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXKH47N60C データシート (PDF)
-
Series : IXKH47N60
概要 IXKH47N60C
The exceptional design of the IXKH47N60C Power MOSFETs is a game-changer in the world of semiconductor technology. By incorporating Super Junction technology, these MOSFETs deliver unparalleled efficiency with the lowest RDS(on) in their class. The internal DCB isolation streamlines assembly processes and minimizes thermal resistance, enhancing overall performance. Furthermore, their Avalanche rating ensures robust operation, making them ideal for demanding applications where reliability is paramount
主な特長
- Efficient energy transfer
- High current handling
- Low voltage drop
応用
- Advanced welding technology
- Efficient inductive heating
- Space-saving solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | CoolMOS™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 30A, 10V | Vgs(th) (Max) @ Id | 4V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 650 nC @ 10 V | Vgs (Max) | ±20V |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247AD | Package / Case | TO-247-3 |
Base Product Number | IXKH47 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![BC848B,215](/img/package/sot23.jpg)
BC848B,215
General Purpose SMT NPN Transistor from BC848 Series, Operating at 30 Volts and 100 Milliamps
![MTW32N20EG](/img/package/to247.jpg)
MTW32N20EG
Electronic component, power field-effect transistor, 200 volts, 32 amperes, three-pin TO-247 casing
![DMHC3025LSDQ-13](/img/package/soic8.jpg)
DMHC3025LSDQ-13
High-quality MOSFET with transient voltage suppression technology
![TP0610L](/img/package/to92.jpg)
TP0610L
Power-efficient MOSFET rated at 60 volts and 0.18 amps, with a maximum power dissipation of 0.8 watts
![IXFT16N120P](/img/package/to268.jpg)
IXFT16N120P
MOSFET featuring 16 Amps current, 1200V voltage, and 1 ohm Rds
![TIP140G](/img/package/to247.jpg)
TIP140G
TIP140G - Bipolar Power Transistor rated for 10 A and 60 V, NPN Darlington configuration
![SIHF22N60E-GE3](/img/package/to220.jpg)
SIHF22N60E-GE3
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP
![NVTFS9D6P04M8LTAG](/img/package/dfn8.jpg)
NVTFS9D6P04M8LTAG
P-channel Power MOSFET rated at 40 volts with a maximum current of 64 amperes and a low on-resistance of 0
![SI7884DP-T1-E3](/img/package/power33.jpg)
SI7884DP-T1-E3
Replacement option for SI7884DP-T1-E3
![IRFP4710PBF](/img/package/to247.jpg)
IRFP4710PBF
N-channel power MOSFET with a 100V voltage rating and a maximum continuous drain current of 72A, packaged in a TO-247AC casing