IXSN80N60AU1
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部品番号 : IXSN80N60AU1
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : IGBT Modules
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日付シート : IXSN80N60AU1 データシート (PDF)
概要 IXSN80N60AU1
The IXSN80N60AU1 stands out as an exceptional high voltage insulated gate bipolar transistor (IGBT) designed to excel in high power applications. With a robust 600V voltage rating and an 80A current rating, this IGBT is well-suited for a wide range of industrial uses. Its compact and rugged design, coupled with low thermal resistance and high power density, ensures outstanding performance. Featuring ultra-low conduction and switching losses, the IXSN80N60AU1 delivers high efficiency and reliable operation. Packaged in a TO-268 package and capable of operating at temperatures up to 150°C, it also offers a 10μs short circuit withstand time, further establishing its durability and dependability. Engineered for use in motor control, power supplies, renewable energy systems, and industrial automation, this IGBT is specifically tailored for high voltage and current applications, providing superior efficiency and reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 160 A | Power - Max | 500 W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 80A | Current - Collector Cutoff (Max) | 1 mA |
Input Capacitance (Cies) @ Vce | 8.5 nF @ 25 V | Input | Standard |
NTC Thermistor | No | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227B | Base Product Number | IXSN80 |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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