IXTH110N10L2
IXTH110N10L2: MOSFET designed for linear power applications
在庫：5,658
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXTH110N10L2
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXTH110N10L2 データシート (PDF)
-
Series : IXTH110N10
概要 IXTH110N10L2
Tailored specifically for demanding applications, the IXTH110N10L2 Power MOSFET offers superior performance and reliability in current saturation regions. Through innovative design and advanced features such as low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA), these MOSFETs are built to excel in challenging operating environments. By addressing the risks associated with linear-mode operation, including high thermal and electrical stresses, the IXTH110N10L2 ensures enhanced device durability and reliability, making it a top choice for applications requiring exceptional performance
主な特長
- Safe operating conditions
- Low electromagnetic emission
- Long-term reliability guaranteed
- Ruggedized against shock and vibration
応用
- Voltage regulation
- DC converters
- Sensor interface
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | Linear L2™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V | Power Dissipation (Max) | 600W (Tc) |
| Mounting Type | Through Hole | Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 | Base Product Number | IXTH110 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
MRFE6S9125NBR1
LDMOS RF Power Transistor with frequency range of 865-960 MHz
2SK3557-6-TB-E
15V voltage rating
IRF9321TRPBF
The IRF9321TRPBF by Infineon is an 8-Pin SOIC-packaged P-channel MOSFET, featuring a robust 15A current handling capability and a 30V voltage rating
DECASMDC050F/60-2
PTC Resettable Fuse 0.55A(hold) 1.1A(trip) 60VDC 10A 1W 0.1s 0.2Ohm SMD Solder Pad 2018 T/R
SPZTA42T1G
Tape and Reel Packaging for SPZTA42T1G Automotive NPN Transistor
BC81725MTF
BC81725MTF: NPN General Purpose Amplifier Bipolar Transistor in SOT-23 Package
IRF7492PBF
IRF7492PBF is a N-channel MOSFET transistor with 200 volts and 3.7 amps in an 8-pin SOIC package
CM300DY-28H
Dual 1400V 300A H-Series IGBT Module
PSMN005-30K
N-Channel Silicon Power MOSFET Transistor
IAUT300N08S5N012ATMA2
Automotive-Grade N-Channel MOSFET