IXTH12N150
General-purpose N-channel MOSFET for DC-DC converters
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $9.218 | $9.22 |
10 | $8.486 | $84.86 |
30 | $8.039 | $241.17 |
100 | $7.665 | $766.50 |
在庫:7,786
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXTH12N150
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH12N150 データシート (PDF)
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Series : IXTH12N150
概要 IXTH12N150
The IXTH12N150 MOSFET is a key component in power switching systems due to its high voltage capabilities and N-Channel design. With a wide range of applications, this MOSFET is commonly used in high-voltage power supplies where reliability and efficiency are essential. Additionally, its suitability for capacitor discharge circuits makes it a versatile choice for various electronic devices
主な特長
- Ruggedized plastic package for harsh environments
- Fast turn-off times and low inrush current
- Achieves high reliability with derating curve
- Laser-trimmed resistors for precise control
- Low power consumption and high efficiency
- Compliant to industry-standard specifications
応用
- Fast switching speed
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 750 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1500 V | Drain Current-Max (ID) | 12 A |
Drain-source On Resistance-Max | 2.2 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 80 pF | JEDEC-95 Code | TO-247AD |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 890 W | Pulsed Drain Current-Max (IDM) | 40 A |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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