• packageimg
packageimg

IXTH130N20T

effect transistor, power transistor, IXTH130N20T, product description

数量 単価(USD) 合計金額
1 $5.814 $5.81
200 $2.251 $450.20
500 $2.172 $1,086.00
1000 $2.132 $2,132.00

在庫：7,358

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IXTH130N20T このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXTH130N20T

Meet the IXTH130N20T, a top-of-the-line Trench Gate Power MOSFET that is specifically tailored for low voltage, high current applications. Offering an extremely low RDS(on) value, this MOSFET ensures minimal power dissipation, which can significantly improve energy efficiency. Its wide operating temperature range of -40 °C to 175 °C makes it a versatile option for a variety of applications, including automotive systems and other demanding environments where reliability is key. When it comes to performance and durability, the IXTH130N20T stands out as a robust and efficient solution that can meet the challenges of today's complex technological landscape

主な特長

  • Wide Operating Range
  • High Surge Currents
  • Reverse Recovery Time
  • Faster Switching Times

応用

  • Robust power handling capabilities
  • Flexible mounting options
  • Cost-effective solution

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.016 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 122 pF JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 830 W Pulsed Drain Current-Max (IDM) 320 A
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Series Trench
Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3 Base Product Number IXTH130

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。