IXTH13N110
High-power N-Channel FET suitable for applications requiring high voltage and current handling
在庫：5,750
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部品番号 : IXTH13N110
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH13N110 データシート (PDF)
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Series : IXTH13N110
概要 IXTH13N110
Meet the IXTH13N110 MOSFET, a standout performer in the High Voltage series designed for powering versatile and demanding applications. Its N-Channel standard MOSFET construction makes it a reliable choice for power switching systems, offering exceptional performance in high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. With its robust design and superior capabilities, this MOSFET is the go-to solution for engineers seeking efficient and reliable power control in a variety of applications
主な特長
- Excellent thermal performance
- Surge-tested to ensure reliability
- Low electromagnetic interference (EMI)
- Compliant with AEC-Q101 standard
応用
- Compact design
- Efficient performance
- Reliable operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | MegaMOS™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1100 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5650 pF @ 25 V | Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
| Base Product Number | IXTH13 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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