IXTH48P20P
High-Power Transistor
在庫:5,679
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXTH48P20P
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXTH48P20P データシート (PDF)
-
Series : IXTH48P20
概要 IXTH48P20P
Whether used in power supplies, motor controls, inverters, or switching circuits, the IXTH48P20P delivers reliable performance and high efficiency. Its combination of high voltage handling, high current capacity, and low on-resistance makes it a versatile choice for a wide range of industrial and automotive applications. Trust in the IXYS HiPerFETTM series to provide top-notch performance for your power management needs
主な特長
- Low leakage current
- Rapid response to input changes
- Safe operation in harsh environments
応用
- Industrial motor control
- Low on-resistance
- Automotive systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 2500 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 48 A |
Drain-source On Resistance-Max | 0.085 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 170 pF | JEDEC-95 Code | TO-247AD |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 462 W | Pulsed Drain Current-Max (IDM) | 144 A |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![IRFBC40PBF](/img/package/to220.jpg)
IRFBC40PBF
N-Channel 600V 6.2A Power MOSFET in TO-220AB Package - Bulk
![IRFH5250TR2PBF](/img/package/pqfn8.jpg)
IRFH5250TR2PBF
MOSFET with a low on-state resistance of 1.15mOhm
![ZVN4106FTA](/img/package/sot23.jpg)
ZVN4106FTA
Metal-Oxide-Semiconductor Field-Effect Transistor N-Channel 60V
![IRLH5030TRPBF](/img/package/pqfn8.jpg)
IRLH5030TRPBF
MOSFET transistor with N-channel, 100V capacity, 9mOhms resistance, and 44nC gate charge
![SI4435DYPBF](/img/package/soic8.jpg)
SI4435DYPBF
HEXFET with a maximum drain-source voltage rating of -30V
![IRF1404SPBF](/img/package/to263.jpg)
IRF1404SPBF
N-Channel Silicon Power MOSFET with 40V Voltage Rating
![NTE186A](/img/package/to3.jpg)
NTE186A
Silicon NPN Transistor with 3A I(C) and 40V V(BR)CEO
![AOB280L](/img/package/d2pak.jpg)
AOB280L
TO-263-3-packaged N-Channel MOSFET capable of handling 80 volts, meeting RoHS requirements
![BC640TA](/img/package/to92.jpg)
BC640TA
Frequency Response: 100MHz
![CM100DU-12H](/img/package/module.jpg)
CM100DU-12H
Trans IGBT Module