SI4435DYPBF
HEXFET with a maximum drain-source voltage rating of -30V
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- 365日の品質保証
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部品番号 : SI4435DYPBF
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パッケージ/ケース : SOIC-8
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : SI4435DYPBF データシート (PDF)
概要 SI4435DYPBF
P-Channel 30 V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 8 A | Rds On - Drain-Source Resistance | 20 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 40 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 31 ns | Height | 1.75 mm |
| Length | 4.9 mm | Product Type | MOSFET |
| Rise Time | 17 ns | Factory Pack Quantity | 95 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 130 ns |
| Typical Turn-On Delay Time | 16 ns | Width | 3.9 mm |
| Part # Aliases | SP001569846 | Unit Weight | 0.019048 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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