IXTN170P10P
High-power P-channel MOSFET transistor in a 4-pin SOT-227B package rated for 100 volts and 170 amperes
在庫:8,406
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部品番号 : IXTN170P10P
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パッケージ/ケース : SOT-227-4
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXTN170P10P データシート (PDF)
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Series : IXTN170P10
概要 IXTN170P10P
Leveraging our state-of-the-art Polar technology platform, the IXTN170P10P Polar™ P-Channel MOSFETs deliver unparalleled performance and efficiency, with a 30% reduction in on-state resistance (RDSon) and a 40% decrease in gate charge (Qg) when compared to conventional alternatives. This significant improvement translates to lower conduction loss and superior switching characteristics, empowering applications to operate at their best. Furthermore, these MOSFETs are engineered to withstand even the most demanding environments, boasting dynamic dv/dt and avalanche ratings for exceptional ruggedness and reliability, while their positive temperature coefficient on-state resistance facilitates easy paralleling
主な特長
- Fast switching time results in high efficiency
- High voltage tolerance
- Low power consumption
応用
- Surge suppressors
- Frequency inverters
- Power factor correction
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | Polar | Package | Tube |
Product Status | Active | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V | Power Dissipation (Max) | 890W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXTN170 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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