IXTN200N10L2
channel power MOSFET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $27.716 | $27.72 |
30 | $26.784 | $803.52 |
在庫:7,699
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXTN200N10L2
-
パッケージ/ケース : SOT-227-4
-
ブランド : IXYS
-
コンポーネントのカテゴリ : Single FETs, MOSFETs
-
日付シート : IXTN200N10L2 データシート (PDF)
概要 IXTN200N10L2
Crafted specifically for applications requiring Power MOSFETs to function in current saturation regions, the IXTN200N10L2 product offers a sophisticated solution with a focus on efficiency and reliability. Featuring low thermal resistances and high power density, these devices are equipped to operate seamlessly even in challenging environments. The extended Forward Bias Safe Operating Areas (FBSOA) of Littelfuse LinearL2™ Power MOSFETs make them ideal for linear-mode operation, where high drain voltages and currents can strain typical devices. By mitigating electro-thermal instability, these Power MOSFETs ensure larger operating windows that prevent common device failures. The guaranteed FBSOAs at 75°C validate the robustness and durability of this innovative product
主な特長
- Fast switching times reduce power loss
- Avalanche-rated for safety assurance
- International standards met for compatibility
応用
- Reliable power protection
- Efficient energy management
- Precision current control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | Linear L2™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 178A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | Power Dissipation (Max) | 830W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXTN200 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXFH16N50P
N-MOSFET transistor with Polar™ technology, unipolar, capable of handling 500V and 16A, with a power dissipation of 300W, packaged in TO247-3
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
IXTA120P065T
Transistor MOSFET for P-channel applications with 65V voltage rating and 120A current rating in a 3-pin D2PAK package
IXFP76N15T2
Low on-resistance of 0.02ohm