IXTX110N20L2
960W Power Dissipation
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $29.797 | $29.80 |
200 | $11.532 | $2,306.40 |
500 | $11.126 | $5,563.00 |
1000 | $10.926 | $10,926.00 |
在庫:5,757
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXTX110N20L2
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パッケージ/ケース : TO247-3
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ブランド : IXYS
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : IXTX110N20L2 データシート (PDF)
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Series : IXTX110N20
概要 IXTX110N20L2
Tailored to meet the requirements of applications that demand Power MOSFETs to operate in their current saturation regions, the IXTX110N20L2 offers unique features for enhanced performance. With low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA), these devices are designed to excel in challenging conditions. When Power MOSFETs are used in linear-mode operation, they are subjected to high thermal and electrical stress levels due to the presence of high drain voltages and currents. These extreme conditions can lead to the failure of conventional devices. However, the LinearL2™ Power MOSFETs from Littelfuse are engineered to withstand such challenges by suppressing electro-thermal instability and expanding the FBSOAs. The extended operating windows provided by the FBSOAs guarantee reliability and performance at 75°C, making the IXTX110N20L2 a dependable choice for demanding applications
主な特長
- Sophisticated circuit design
- Low current consumption
- Robust and reliable operation
応用
- Highly adaptable
- User-friendly interface
- Reliable performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.024 |
Continuous Drain Current @ 25 ℃ (A) | 110 | Gate Charge (nC) | 500 |
Input Capacitance, CISS (pF) | 23000 | Thermal resistance [junction-case] (K/W) | 0.13 |
Configuration | Single | Package Type | TO-247 PLUS |
Typical Reverse Recovery Time (ns) | 420 | Power Dissipation (W) | 960 |
Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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