MJ13091
power transistor, 15 amp switch, second-generation power transistor, MJ13091
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $11.717 | $11.72 |
200 | $4.534 | $906.80 |
500 | $4.375 | $2,187.50 |
1000 | $4.297 | $4,297.00 |
在庫:9,585
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJ13091
-
パッケージ/ケース : TO-204AA
-
ブランド : Harris Corporation
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : MJ13091 データシート (PDF)
概要 MJ13091
Bipolar (BJT) Transistor NPN 6 V 15 A 175 W Through Hole TO-3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Active |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 15 A |
Voltage - Collector Emitter Breakdown (Max) | 6 V | Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 15A |
Current - Collector Cutoff (Max) | 500µA | DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 10A, 3V |
Power - Max | 175 W | Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BUZ21](/files/uploads/product/s/3e65b6a84e00463bbc7ee059c0fc45ca.webp)
BUZ21
Advanced power electronic component for industrial automation applicatio
![HGTP3N60A4](/img/package/to220.jpg)
HGTP3N60A4
220AB 3-Pin Fairchild HGTP3N60A4 IGBT, 600V 17A
![RFD14N05L](/img/package/IPAK.jpg)
RFD14N05L
Trans MOSFET N-CH Si 50V 14A 3-Pin(3+Tab) IPAK Tube
![BD534](/img/package/to220.jpg)
BD534
BJT PNP Medium Power
![IRFP451](/img/package/to247.jpg)
IRFP451
14A N-CHANNEL POWER MOSFET
![HGTG20N50C1D](/img/package/to247.jpg)
HGTG20N50C1D
Chip for N-channel Insulated Gate Transistor (IGBT), Rated at 500 Volts and 26 Amperes, TO-247 Package
![RFG40N10](/img/package/to247.jpg)
RFG40N10
MOSFET with a maximum voltage of 100 and current rating of 40 amps
![HGTB12N60D1C](/img/package/to220.jpg)
HGTB12N60D1C
12A 600V current sensing N-channel IGBT
![IRFD1Z3](/img/package/dip4.jpg)
IRFD1Z3
400mA, 60V N-channel MOSFET designed for small signal amplification purposes
![IRF9632](/img/package/to220.jpg)
IRF9632
5A, 200V, 1.2ohm, P-Channel POWER MOSFET
![DMG1029SV-7](/files/uploads/product/s/a76bf524-11a1-4963-aa11-08dbbf1058dd.webp)
DMG1029SV-7
The DMG1029SV-7 is a silicon N-channel MOSFET designed to operate at a maximum voltage of 60V, housed in an SOT-563 package
![2N7002P,235](/img/package/sot233.jpg)
2N7002P,235
N-channel MOSFET with a voltage rating of 60V and a current rating of 0.36A, packaged in SOT-23
![2SCR513P5](/img/package/sot89.jpg)
2SCR513P5
Transistors - Bipolar BJT
![IRG4PC40UDPBF](/img/package/to247.jpg)
IRG4PC40UDPBF
Designed for efficiency in a variety of applications
![IRG7IC28UPBF](/img/package/to220.jpg)
IRG7IC28UPBF
channel, 600v v(b)rces, 25a i(c)
![BC817-25-7-F](/img/package/sot233.jpg)
BC817-25-7-F
High Quality Transistor
![NVMFS5C612NLT1G](/img/package/so8.jpg)
NVMFS5C612NLT1G
NVMFS5C612NLT1G is a power MOSFET suitable for automotive environments
![ZXMN6A07F](/img/package/sot23.jpg)
ZXMN6A07F
Enhancement Mode N-Channel MOSFET
![MJD112T4G](/img/package/dpak.jpg)
MJD112T4G
MJD112T4G is a NPN Complementary Darlington Power Transistor
![UM6K33NTN](/img/package/sot236.jpg)
UM6K33NTN
MOSFET,dual,N-channel,50V,0.2A,SOT363 ROHM UM6K33NTN Dual N-channel MOSFET Transistor, ±200 mA, 50 V, 6-Pin SOT-363