MJD45H11TF
Trans GP BJT PNP 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R
在庫：7,397
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJD45H11TF
-
パッケージ/ケース : TO-252-3
-
ブランド : onsemi
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : MJD45H11TF データシート (PDF)
概要 MJD45H11TF
The MJD45H11TF Power Bipolar Junction Transistor is a versatile component ideal for a wide range of applications. Whether you need a reliable switching output in a switching regulator, a powerful driver stage in a converter, or a robust power amplifier, this transistor is up to the task. Its design ensures efficient performance and consistent output, making it a valuable addition to any electronic circuit
主な特長
- Improved Thermal Performance
- Simplified Circuit Designs
- Increased Power Handling Capabilities
- Reduced Power Consumption Achieved
- Faster Recovery Times Guaranteed
- Increased Reliability Assured
応用
- High performance
- Compact design
- Advanced technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Obsolete | Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 8 A | Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A | Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V | Power - Max | 1.75 W |
| Frequency - Transition | 40MHz | Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-Pak | Base Product Number | MJD45 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
MJ802
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Bag
MJD44H11G
SILICON PLASTIC/EPOXY 2 PIN TRANSISTOR
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
MJ11029
Bipolar Power Darlington Transistors for use in general purpose amplifiers
MJ11030
The Bipolar Power Darlington Transistors featured in this product are specifically suited for complementary general purpose amplifier applications
MJ14002
ROHS TO-204 Bipolar Transistors
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
MJH6287
MJH6287 is a silicon-based power bipolar transistor designed with a maximum collector current of 20A and a breakdown voltage of 100V
MJF18008
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating
FGH40N60UFDTU
IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube
IRF5851TR
Mosfet Array 20V 2.7A
NIF9N05CLT1G
N-channel 59V 2.6A Transistor MOSFET in SOT-223 Package
PMPB85ENEAX
Trans MOSFET N-CH 60V 3A Automotive 6-Pin DFN-MD EP T/R
CMF10120D
This product is a high-voltage N-channel MOSFET made from Silicon Carbide, designed for a maximum voltage of 1
IRFL9014PBF
channel TO-261AA transistor
IRLR3114ZPBF
DPAK Tube containing a 40V 130A N-channel silicon MOSFET transistor
RQ5E040AJTCL
4A N-channel MOSFET designed for middle power applications
ZX5T955ZTA
ZX5T955ZTA is a PNP bipolar transistor with a voltage rating of 140V and a power rating of 2.1W at 100mA, capable of handling up to 1A of current
IKW40N65H5FKSA1
Trans IGBT Chip