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MJE182

Trans GP BJT NPN 80V 3A 12500mW 3-Pin(3+Tab) SOT-32 Tube

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迅速な見積もり

見積もりリクエストを送信してください MJE182 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 MJE182

The MJE182 is a valuable addition to any electronics enthusiast's toolkit. Its complementary relationship with the MJE170, MJE171, MJE172 PNP transistors ensures seamless integration into a wide range of circuit designs. Whether you're designing a new audio amplifier or experimenting with high-speed switching applications, the MJE182's NPN configuration provides a stable and efficient solution. Trust in the MJE182 to deliver consistent performance and reliability in your electronics projects

主な特長

  • Maximum Operating Temperature - Tj = 150°C @ 200 Vdc
  • Collector-Emitter Saturation Current - IC(sat) = 500 mA (Max) @ VCEO = 80 Vdc
  • Leakage Current at Collector-Base Junction - ICBO = 1 μA (Max) @ Rated VCB
  • Peak Pulse Power for Avalanche Energy - Ppp = 200 W @ 10/1000μs
  • Collector-Emitter Voltage with No Base Drive - VCBO = 80 Vdc (Max)
  • Minimum Input Capacitance - Cmin = 50 pF

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-32-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1.7 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 12.5 W
Gain Bandwidth Product fT 50 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series MJE182
Brand STMicroelectronics Continuous Collector Current 3 A
DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 250
Height 10.8 mm Length 7.8 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 50
Subcategory Transistors Technology Si
Width 2.7 mm Unit Weight 0.002116 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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