SIA931DJ-T1-GE3
VISHAY - SIA931DJ-T1-GE3 - Dual MOSFET, P Channel, 30 V, 4.5 A, 0.052 ohm, PowerPAK SC70, Surface Mount
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部品番号 : SIA931DJ-T1-GE3
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パッケージ/ケース : SC70-6
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ブランド : Siliconix
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : SIA931DJ-T1-GE3 データシート (PDF)
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Series : SIA931DJ
概要 SIA931DJ-T1-GE3
VISHAY - SIA931DJ-T1-GE3 - Dual MOSFET, P Channel, 30 V, 4.5 A, 0.052 ohm, PowerPAK SC70, Surface Mount
主な特長
- Rapid fall time and rise time
- Limited inductance and capacitance
- High-speed switching and high-frequency operation
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC-70-6 | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 65 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 13 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 7.8 W |
Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
Series | SIA | Brand | Vishay Semiconductors |
Configuration | Dual | Fall Time | 5 ns |
Forward Transconductance - Min | 8 S | Height | 0.75 mm |
Length | 2.05 mm | Product Type | MOSFET |
Rise Time | 18 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 P-Channel |
Typical Turn-Off Delay Time | 17 ns | Typical Turn-On Delay Time | 23 ns |
Width | 2.05 mm |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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