SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.342 | $1.34 |
10 | $1.151 | $11.51 |
30 | $1.044 | $31.32 |
100 | $0.924 | $92.40 |
500 | $0.871 | $435.50 |
1000 | $0.848 | $848.00 |
在庫:8,482
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SI4126DY-T1-GE3
-
パッケージ/ケース : 8-SOIC
-
ブランド : Vishay Siliconix
-
コンポーネントのカテゴリ : Single FETs, MOSFETs
-
日付シート : SI4126DY-T1-GE3 データシート (PDF)
-
Series : SI4126DY
概要 SI4126DY-T1-GE3
Featuring a MOSFET transistor type, the SI4126DY-T1-GE3 is a reliable component with a continuous drain current rating of 39A and a drain-source voltage of 30V. Its low on-resistance of 0.0034ohm and threshold voltage of 2.5V provide excellent conductivity and precise control in power electronics applications. With a power dissipation rating of 3.5W, this transistor can handle moderate power levels while maintaining efficiency. Additionally, it is RoHS compliant, ensuring that it meets environmental standards for restricted substances. The SI4126DY-T1-GE3 is a versatile option for designers looking for a high-performance MOSFET transistor that balances power handling capability, efficiency, and environmental compliance
主な特長
- Advanced MOSFET technology
- Highly efficient power conversion
応用
- Low-Side DC/DC Conversion - Notebook - Gaming
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | TrenchFET® | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 2.75mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 4405 pF @ 15 V |
Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Base Product Number | SI4126 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SI2393DS-T1-GE3](/files/uploads/product/s/cbd048e82eb649f186b6a1f97936235c.webp)
SI2393DS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V
![SI2333DDS-T1-GE3](/files/uploads/product/s/9e4ddfe84807483cb0a9e620576f3d70.webp)
SI2333DDS-T1-GE3
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A
![SI7157DP-T1-GE3](/files/uploads/product/s/49efb75707d545d49fbcd21242a1055c.webp)
SI7157DP-T1-GE3
-20V Vds and 12V Vgs MOSFET suitable for power management tasks
![SI2305DS-T1-E3](/files/uploads/product/s/aa2ec247b5084488815fffa340c76e95.webp)
SI2305DS-T1-E3
RoHS Compliant Package-3
![SI2323DS-T1-GE3](/files/uploads/product/s/8818fb42b3264227976add868b79c1fd.webp)
SI2323DS-T1-GE3
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation
![SI4410BDY-T1-E3](/files/uploads/product/s/73c0592ae4c84de28f4881002bb48891.webp)
SI4410BDY-T1-E3
Small-signal Silicon MOSFET SI4410BDY-T1-E3, featuring an N-channel design, rated for 7500 mA and 30 V
![SI7905DN-T1-GE3](/files/uploads/product/s/b5be664753094f5ca826453855579540.webp)
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
![SI1077X-T1-GE3](/img/package/so5.jpg)
SI1077X-T1-GE3
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6
![SI1965DH-T1-GE3](/img/package/so5.jpg)
SI1965DH-T1-GE3
SI1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay