SI3458BDV-T1-GE3
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
在庫:5,720
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SI3458BDV-T1-GE3
-
パッケージ/ケース : TSOP-6
-
ブランド : Siliconix
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SI3458BDV-T1-GE3 データシート (PDF)
概要 SI3458BDV-T1-GE3
主な特長
- Rugged design for harsh environments
- Compliant with RoHS and WEEE directives
- High voltage surge withstand capability
- Safe operating area (SOA) monitored
- Temperature compensated for accurate results
- Automatic shutdown on overcurrent detection
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 4.1 A | Rds On - Drain-Source Resistance | 100 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 3.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3.3 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Fall Time | 10 ns | Product Type | MOSFET |
Rise Time | 17 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns | Typical Turn-On Delay Time | 16 ns |
Part # Aliases | SI3458BDV-T1-BE3 SI3458BDV-GE3 | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![SI2393DS-T1-GE3](/files/uploads/product/s/cbd048e82eb649f186b6a1f97936235c.webp)
SI2393DS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V
![SI4126DY-T1-GE3](/files/uploads/product/s/1f70955f212043a9b41955142135e28b.webp)
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
![SI2333DDS-T1-GE3](/files/uploads/product/s/9e4ddfe84807483cb0a9e620576f3d70.webp)
SI2333DDS-T1-GE3
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A
![SI7157DP-T1-GE3](/files/uploads/product/s/49efb75707d545d49fbcd21242a1055c.webp)
SI7157DP-T1-GE3
-20V Vds and 12V Vgs MOSFET suitable for power management tasks
![SI2305DS-T1-E3](/files/uploads/product/s/aa2ec247b5084488815fffa340c76e95.webp)
SI2305DS-T1-E3
RoHS Compliant Package-3
![SI2323DS-T1-GE3](/files/uploads/product/s/8818fb42b3264227976add868b79c1fd.webp)
SI2323DS-T1-GE3
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation
![SI4410BDY-T1-E3](/files/uploads/product/s/73c0592ae4c84de28f4881002bb48891.webp)
SI4410BDY-T1-E3
Small-signal Silicon MOSFET SI4410BDY-T1-E3, featuring an N-channel design, rated for 7500 mA and 30 V
![SI7905DN-T1-GE3](/files/uploads/product/s/b5be664753094f5ca826453855579540.webp)
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
![BSC010NE2LSIATMA1](/img/package/power33.jpg)
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 MOSFET N-channel 25 volts 100 amps TDSON-8
![SI1077X-T1-GE3](/img/package/so5.jpg)
SI1077X-T1-GE3
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6
![NVD5117PLT4G](/img/package/dpak.jpg)
NVD5117PLT4G
P-Channel 60V 11A Automotive MOSFET, AEC-Q101 Certified, DPAK Package, Tape and Reel
![BC846AS-7](/img/package/sot363.jpg)
BC846AS-7
BC846AS-7 is a type of Bipolar Junction Transistor (BJT) capable of handling currents up to 100mA and voltages of 65V
![RSD160P05TL](/img/package/dpak.jpg)
RSD160P05TL
Product RSD160P05TL is a MOSFET with a P-channel, capable of handling a voltage of -45V and current of -16A in a TO-252 package
![TN5335K1-G](/img/package/sot233.jpg)
TN5335K1-G
Three-pin SOT-23 package N-channel MOSFET suitable for high power applications
![BC817-40LT3G](/img/package/sot23.jpg)
BC817-40LT3G
BC817-40LT3G Transistor Specifications
![IRF7316PBF](/img/package/soic8.jpg)
IRF7316PBF
High voltage P-Channel MOSFET with dual design and 20V max VGS
![MJD127TF](/img/package/dpak.jpg)
MJD127TF
8.0 Amps PNP Darlington Bipolar Power Transistor with 100 Volts
![FDS7788](/img/package/soic8.jpg)
FDS7788
SO-8 package small signal Si MOSFET with 18000mA, 30V
![NDF02N60ZG](/img/package/llp.jpg)
NDF02N60ZG
Power MOSFET 600V 2.4A 4.8 Ohm N-Channel TO-220FP
![BC848CLT1G](/img/package/sot23.jpg)
BC848CLT1G
BC848CLT1G is a small signal bipolar transistor with a current rating of 0.1A and a breakdown voltage of 30V