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SI1965DH-T1-GE3

SI1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay

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概要 SI1965DH-T1-GE3

The product SI1965DH-T1-GE3 is a p-channel transistor with a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 1.3A. Its on-resistance (Rds(On)) is 0.315 Ohm, and it is designed for surface mounting. The Rds(On) test voltage (Vgs) is 4.5V, and the threshold voltage (Vgs) is 400mV. However, it is important to note that this product is not RoHS compliant

主な特長

  • The SI1965DH-T1-GE3 is a MOSFET transistor designed for high-power applications
  • It features a low on-resistance (RDS(on)), typically around 0
  • 95mΩ at 10V gate drive, enabling efficient power conversion
  • With a compact form factor and high current handling capability, it's suitable for various power management applications, including power supplies and motor control

    • 応用

    Load Switch for Portable Devices

    仕様

    以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

    Series SI1 Product Status Active
    Technology Si Configuration Dual
    FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V
    Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 390mOhm @ 1A, 4.5V
    Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 8V
    Input Capacitance (Ciss) (Max) @ Vds 120pF @ 6V Power - Max 1.25W
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
    Package / Case SOT-363-6 Supplier Device Package SC-70-6
    Base Product Number SI1965 Manufacturer Vishay
    Product Category MOSFET RoHS Details
    Mounting Style SMD/SMT Transistor Polarity P-Channel
    Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 12 V
    Id - Continuous Drain Current 1.3 A Rds On - Drain-Source Resistance 390 mOhms
    Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 4.2 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
    Channel Mode Enhancement Tradename TrenchFET
    Brand Vishay Semiconductors Fall Time 10 ns
    Product Type MOSFET Rise Time 27 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type 2 P-Channel Typical Turn-Off Delay Time 15 ns
    Typical Turn-On Delay Time 12 ns Part # Aliases SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3
    Unit Weight 0.000265 oz

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    • QAと返品ポリシー

      部品の品質保証: 365 日

      返品・返金：90日以内

      返品・交換：90日以内

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