SI4559ADY-T1-GE3
MOSFET N/P-Ch MOSFET 60V 58/120mohm @ 10V
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部品番号 : SI4559ADY-T1-GE3
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パッケージ/ケース : SOIC-8
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ブランド : Siliconix
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : SI4559ADY-T1-GE3 データシート (PDF)
概要 SI4559ADY-T1-GE3
Mosfet Array 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
主な特長
- Reduced electromagnetic interference
- High surge current handling
- Low input capacitance
- Compact PCB layout design
- Lead-free and halogen-free
- SMT package for small form factor
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | N-Channel, P-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 5.3 A, 3.9 A |
| Rds On - Drain-Source Resistance | 58 mOhms, 120 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V | Qg - Gate Charge | 20 nC, 22 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 3.1 W, 3.4 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI4 |
| Brand | Vishay Semiconductors | Configuration | Dual |
| Product Type | MOSFET | Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs | Part # Aliases | SI4559ADY-GE3 |
| Unit Weight | 0.026455 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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