STD47N10F7AG
Trans MOSFET N-CH 100V 45A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.515 | $0.52 |
| 10 | $0.426 | $4.26 |
| 30 | $0.381 | $11.43 |
| 100 | $0.339 | $33.90 |
| 500 | $0.301 | $150.50 |
| 1000 | $0.287 | $287.00 |
在庫：7,536
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : STD47N10F7AG
-
パッケージ/ケース : DPAK
-
Brand : STMicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
日付シート : STD47N10F7AG データシート (PDF)
-
Series : STD47N10F7AG
概要 STD47N10F7AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
主な特長
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | STMicroelectronics | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TO-252-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 22 A |
| Rds On - Drain-Source Resistance | 18 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 25 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 60 W | Channel Mode | Enhancement |
| Qualification | AEC-Q101 | Tradename | STripFET |
| Series | STD47N10F7AG | Brand | STMicroelectronics |
| Configuration | Single | Fall Time | 8 ns |
| Product Type | MOSFET | Rise Time | 17 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 24 ns |
| Typical Turn-On Delay Time | 15 ns | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
STB60NF06T4
High-performance 60NF06T4 MOSFET for power applications
STD18N55M5
Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R
STL160NS3LLH7
LGS LV MOSFET, product STL160NS3LLH7, is described as a MOSFET
STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
STL3N65M2
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
STW18NK80Z
Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube
STD15P6F6AG
Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R
STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
KSC2752OSTU
ON Semi KSC2752OSTU NPN Transistor, 500 mA, 400 V, 3-Pin TO-126
AUIRF4905STRL
Automotive-Qualified Single P-Channel HEXFET Power MOSFET for -55V operation, housed in a D2-Pak Package compliant with RoHS regulations
MTW24N40E
MTW24N40E, an N-channel silicon power MOSFET, features a 24A current rating and a 400V voltage rating, alongside a low on-resistance of 0.16 ohms
FGH40N60UFDTU
IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube
BCX17LT1G
SOT23 PNP bipolar transistor 45V 0.5A 0.3W
IPD90P04P405ATMA1
OptiMOS-P2 DPAK-2 MOSFET capable of handling -90A current at -40V voltage
MMBF170LT1
SOT-23 (TO-236) 3 Lead
BC549CTA
With a frequency response up to 300MHz, BC549CTA offers low noise performance at 250mV with a current of 100mA
IRFZ14PBF
ROHS compliant and suitable for various electronic applications requiring high power handling
NVMFD5C446NLT1G
Packaged in 8-pin DFN EP for easy installation
APT5020BVFRG
The APT5020BVFRG MOSFET is an N-channel device in TO-247-3 package, compliant with ROHS standards
CM600DXL-24S
High-power IGBT Semiconductor