STGWA19NC60HD
Trans IGBT Chip N-CH 600V 52A 208W 3-Pin(3+Tab) TO-247 Tube
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部品番号 : STGWA19NC60HD
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パッケージ/ケース : TO-247-3
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Brand : STMicroelectronics
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Components Classification : Single IGBTs
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日付シート : STGWA19NC60HD データシート (PDF)
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Series : STGWA19NC60HD
概要 STGWA19NC60HD
The STGWA19NC60HD is an exceptional power semiconductor device developed by STMicroelectronics. Engineered as a fast-switching insulated gate bipolar transistor (IGBT), it caters to high-power applications such as motor drives, inverters, and industrial systems. With a voltage rating of 600 volts and a current rating of 19 amperes, it is perfectly suited for medium to high power requirements. Its low on-state voltage drop and high switching speed ensure efficient operation and minimize power losses, making it a top choice for high-performance applications
主な特長
- Silicon Carbide (SiC) MOSFET technology
- High power density and efficiency
- Low noise operation for quiet performance
- Excellent thermal dissipation properties
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | PowerMESH™ | Package | Tube |
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 52 A | Current - Collector Pulsed (Icm) | 60 A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A | Power - Max | 208 W |
| Switching Energy | 85µJ (on), 189µJ (off) | Input Type | Standard |
| Gate Charge | 53 nC | Td (on/off) @ 25°C | 25ns/97ns |
| Test Condition | 390V, 12A, 10Ohm, 15V | Reverse Recovery Time (trr) | 31 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247 Long Leads |
| Base Product Number | STGWA19 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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