• packageimg
packageimg

BSC016N06NSTATMA1

High voltage N-channel MOSFET with 31A current rating

在庫：9,893

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください BSC016N06NSTATMA1 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 BSC016N06NSTATMA1

Tailored for high power applications, the BSC016N06NSTATMA1 is a N-channel power MOSFET transistor with a 60V drain-source voltage (VDS) and a 160A continuous drain current (ID), making it well-suited for a wide range of power conversion and control applications. Its low on-resistance (RDS(on)) of 1.6mΩ minimizes power losses and enhances efficiency in high-current circuits, while the low gate charge (Qg) of 250nC enables fast switching speeds and reduces switching losses in the circuit. Housed in a TO-220 package with a through-hole mounting style, it is easy to integrate into existing circuit designs, and its wide operating temperature range from -55°C to 175°C ensures dependable performance in harsh environments

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V Qg - Gate Charge 71 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 139 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 9 ns Forward Transconductance - Min 70 S
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 19 ns Part # Aliases BSC016N06NST SP001657074
Unit Weight 0.003683 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

SIHG73N60E-GE3

SIHG73N60E-GE3

SIHG73N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 73A TO-247AC
IRF2807STRLPBF

IRF2807STRLPBF

With a low on-resistance of 13mOhm, IRF2807STRLPBF offers efficient switching performance for high-current requirements up to 82A
NE3210S01-T1B

NE3210S01-T1B

NE3210S01-T1B: A high-performance Trans JFET with a 4V voltage rating and a current capacity of 70mA
TIPL762

TIPL762

Bipolar Transistors - BJT
UMZ1NFHATR

UMZ1NFHATR

Transistors with high reliability for bipolar applications
SI4056DY-T1-GE3

SI4056DY-T1-GE3

100V 11.1A MOSFET with 23mΩ resistance at 15A
DMT6016LFDF-7

DMT6016LFDF-7

Enhancement mode Field-Effect Transistor with 60V drain-source voltage
2SC2412KT146Q

2SC2412KT146Q

NPN silicon transistor optimized for small-signal amplification, enclosed in an SC-59 package, capable of handling up to 0
IXTT30N60L2

IXTT30N60L2

N-type MOSFET capable of handling 30 amps and up to 600 volts, in a TO-268 package
IXTX40P50P

IXTX40P50P

P-Channel MOSFET capable of handling up to 500V and 40A of current with a PLUS247-3 package configuration