BSZ036NE2LSATMA1
channel MOSFET, 25V, 40A, TSDSON-8
在庫：8,804
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部品番号 : BSZ036NE2LSATMA1
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パッケージ/ケース : TSDSON-8
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : BSZ036NE2LSATMA1 データシート (PDF)
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Series : BSZ036NE2LS
概要 BSZ036NE2LSATMA1
Infineon's BSZ036NE2LSATMA1 is a part of the revolutionary OptiMOS™ 25V product family, which is redefining power MOSFET technology. These discrete power MOSFETs, housed in a compact PG-TSDSON-8 package, offer best-in-class power density and energy efficiency. Moreover, Infineon's commitment to sustainability is evident in the RoHS compliance of these products, ensuring that they adhere to the most stringent environmental standards while delivering exceptional performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 25 V | Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 4.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 16 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 37 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Brand | Infineon Technologies |
| Configuration | Single | Fall Time | 2.2 ns |
| Forward Transconductance - Min | 44 S | Height | 1.1 mm |
| Length | 3.3 mm | Product Type | MOSFET |
| Rise Time | 2.8 ns | Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 15 ns | Typical Turn-On Delay Time | 3.3 ns |
| Width | 3.3 mm | Part # Aliases | BSZ036NE2LS SP000854572 |
| Unit Weight | 0.003966 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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