BSZ22DN20NS3GATMA1
Reliable MOSFET device for high-frequency power conversion and motor control
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.527 | $0.53 |
| 10 | $0.429 | $4.29 |
| 30 | $0.387 | $11.61 |
| 100 | $0.334 | $33.40 |
| 500 | $0.297 | $148.50 |
| 1000 | $0.283 | $283.00 |
在庫：8,268
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSZ22DN20NS3GATMA1
-
パッケージ/ケース : TSDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSZ22DN20NS3GATMA1 データシート (PDF)
-
Series : BSZ22DN20NS3-G
概要 BSZ22DN20NS3GATMA1
N-Channel 200 V 7A (Tc) 34W (Tc) Surface Mount PG-TSDSON-8
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 7 A |
| Rds On - Drain-Source Resistance | 194 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 5.6 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 34 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Series | OptiMOS 3 |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 3 ns | Forward Transconductance - Min | 3.5 S |
| Height | 1.1 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 4 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 6 ns |
| Typical Turn-On Delay Time | 4 ns | Width | 3.3 mm |
| Part # Aliases | BSZ22DN20NS3 G SP000781794 | Unit Weight | 0.001367 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
BSM50GP60
High-power transistor for demanding applications
BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
IXFH10N100
247AD ROHS MOSFETs
ZVP2106G
0.45A I(D), 60V, 5ohm, 1-Element
JANTX2N690
Thyristor SCR 600V 150A 3-Pin(2+Tab) TO-3
CM100DU-24NFH
French Electronic Distributor since 1988
IRF540NSPBF
D2PAK Tube package containing a 3-pin (2+tab) N-channel MOSFET with a voltage rating of 100V and current rating of 33A
BSC022N03SG
Featuring a surface mount configuration
2SK184GR
N-channel junction field-effect transistor with 6.5mA current
MJE18004G
Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability
STD5NM60T4
DPAK-packaged MDmesh Power MOSFET featuring N-Channel operation at 600V with a typical resistance of 0.9 Ohms and a 5A current rating
BSM50GB170DN2
Robust and reliable bridge configuration up t