IXBH42N170A
The IXBH42N170A product is a cutting-edge N-channel Trans IGBT Chip engineered to operate at 1700V and handle currents of up to 42A
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部品番号 : IXBH42N170A
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXBH42N170A データシート (PDF)
概要 IXBH42N170A
One key advantage of BiMOSFETs is their positive voltage temperature coefficient, which applies to both the saturation voltage and the forward voltage drop of their intrinsic diode. This characteristic not only enhances their performance but also simplifies the task of managing inductive load currents. By providing a "free" intrinsic body diode, BiMOSFETs offer valuable protection during device turn-off, effectively diverting potentially damaging high Ldi/dt voltage transients
主な特長
- Rapid power response
- Silent operation mode
- Precise temperature control
応用
- Capacitor charging
- Pulsed power systems
- Plasma generators
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | BIMOSFET™ | Package | Tube |
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector (Ic) (Max) | 42 A | Current - Collector Pulsed (Icm) | 265 A |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A | Power - Max | 357 W |
| Switching Energy | 3.43mJ (on), 430µJ (off) | Input Type | Standard |
| Gate Charge | 188 nC | Td (on/off) @ 25°C | 19ns/200ns |
| Test Condition | 850V, 21A, 1Ohm, 15V | Reverse Recovery Time (trr) | 330 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247AD |
| Base Product Number | IXBH42 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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