IXTH16P60P
Transistor MOSFET P-channel with 600V and 16A in TO-247AD package
在庫：8,175
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部品番号 : IXTH16P60P
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH16P60P データシート (PDF)
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Series : IXTH16P60
概要 IXTH16P60P
The IXTH16P60P is a top-of-the-line product that showcases the power of Polar™ P-Channel MOSFETS. With groundbreaking technology that reduces on-state resistance and gate charge significantly compared to traditional models, this MOSFET provides unmatched performance. The lowered conduction loss and superior switching capabilities make it an ideal choice for a wide range of applications, from industrial to automotive
主な特長
- Silicon-based switching devices
- High-frequency operation
- Low electromagnetic interference
- Achieves high power density
応用
- Automatic test equipment
- Battery charger
- Current regulators
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | -600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.72 |
| Continuous Drain Current @ 25 ℃ (A) | -16 | Gate Charge (nC) | 92 |
| Input Capacitance, CISS (pF) | 5120 | Thermal resistance [junction-case] (K/W) | 0.27 |
| Configuration | Single | Package Type | TO-247 |
| Typical Reverse Recovery Time (ns) | 440 | Power Dissipation (W) | 460 |
| Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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