IXTH200N10T
one-directional transistor
在庫:5,527
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部品番号 : IXTH200N10T
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH200N10T データシート (PDF)
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Series : IXTH200N10
概要 IXTH200N10T
With its focus on low voltage and high current applications, the IXTH200N10T MOSFET excels in providing efficient power solutions. Boasting a remarkably low RDS(on), this Trench Gate Power MOSFET ensures minimal power dissipation, enhancing overall performance. Its wide operating temperature range of -40 °C to 175 °C expands its usability, particularly in rugged environments like automotive applications
主な特長
- Automatic Fault Detection
- Compact Footprint
- Economical Pricing
- Fast Response Time
- Low Power Consumption
応用
- Resonant-mode converters
- DC chopper circuits
- Switch-mode power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | Trench | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V | Power Dissipation (Max) | 550W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) | Package / Case | TO-247-3 |
Base Product Number | IXTH200 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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