IXTH6N120
Unipolar N-MOSFET transistor, rated at 1
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $9.327 | $9.33 |
| 200 | $3.609 | $721.80 |
| 500 | $3.483 | $1,741.50 |
| 1000 | $3.420 | $3,420.00 |
在庫：8,485
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXTH6N120
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH6N120 データシート (PDF)
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Series : IXTH6N120
概要 IXTH6N120
The IXTH6N120 MOSFET from the High Voltage series is a versatile and reliable component for a wide range of power switching systems. Whether used in high-voltage power supplies, capacitor discharge circuits, pulse circuits, or current regulators, this MOSFET offers exceptional performance and durability. Its N-Channel Standard design ensures efficient power handling and precise control, making it an ideal choice for demanding applications. With the IXTH6N120, engineers can rely on its superior capabilities to optimize the performance of their systems and achieve high levels of efficiency and reliability
主な特長
- Wide operating range
- Fast response time
- Avalanche rated
- Low noise generation
応用
- Precision engineering
- Optimal functionality
- Sleek design
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V | Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 2.6Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 | Base Product Number | IXTH6 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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