• packageimg
packageimg

IXTH75N10L2

Compact and rugged through-hole power device for high-reliability desig

数量 単価(USD) 合計金額
1 $11.881 $11.88
200 $4.599 $919.80
500 $4.436 $2,218.00
1000 $4.356 $4,356.00

在庫：4,568

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IXTH75N10L2 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXTH75N10L2

Tailored specifically for applications requiring high-performance Power MOSFETs operating in current saturation regions, the IXTH75N10L2 offers exceptional features such as low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). These unique devices are designed to withstand the rigorous demands of linear-mode operation, where they must endure high thermal and electrical stresses caused by simultaneous high drain voltages and currents. Unlike typical Power MOSFETs, the LinearL2™ Power MOSFETs from Littelfuse provide enhanced reliability and durability by suppressing the positive feedback of electro-thermal instability, thereby expanding the FBSOAs and creating larger operating windows. This innovative design ensures that the IXTH75N10L2 can withstand extreme conditions with ease, making it the ideal choice for applications requiring superior performance and longevity

主な特長

  • High-performance design
  • Suitable for high-frequency applications
  • Compact and reliable package

応用

  • Charge pump
  • Voltage reference
  • Temperature sensor

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Package Description TO-247, 3 PIN
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 75 A Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.021 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 350 pF JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W Pulsed Drain Current-Max (IDM) 225 A
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application AMPLIFIER
Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

SI7852DP-T1-E3

SI7852DP-T1-E3

VISHAY - SI7852DP-T1-E3 - MOSFET,N CH,80V,7.6A,PPSO8
CM300DY-28H

CM300DY-28H

Dual 1400V 300A H-Series IGBT Module
UMG2NTR

UMG2NTR

UMG2NTR is a digital transistor that includes 2 NPN pre-biased transistors in a SOT-353-5 package
TGI1314-50L

TGI1314-50L

TGI1314-50L is a pre-biased bipolar transistor with a matched internal transistor GAN HEMT, designed to operate in the frequency range of 8
BUK9Y59-60E,115

BUK9Y59-60E,115

Trans MOSFET N-CH Si 60V 16.7A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
BSM50GD120DN2G

BSM50GD120DN2G

High-Voltage IGBT Modules Suitable for Three-Phase Applications
DTC114EUBTL

DTC114EUBTL

NPN Bipolar Transistor with Digital Biasing
GA200SA60S

GA200SA60S

Bus Switch Dual 24TSSOP IC FET
KSE13009F

KSE13009F

NPN Silicon Power Bipolar Transistor featuring a 12A Collector Current and 400V Breakdown Voltage
BUK6D81-80EX

BUK6D81-80EX

Trans MOSFET N-CH 80V 3.2A Automotive AEC-Q101 6-Pin DFN-MD EP T/R