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IXTH76P10T

Discrete MOSFET with a 76A current rating and 100V voltage rating in P-channel configuration, designed for through-hole mounting in TO-247AD package

数量 単価(USD) 合計金額
1 $5.076 $5.08
200 $1.965 $393.00
500 $1.896 $948.00
1000 $1.862 $1,862.00

在庫：7,043

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
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迅速な見積もり

見積もりリクエストを送信してください IXTH76P10T このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IXTH76P10T

Product IXTH76P10T is a trench P-Channel MOSFET that is ideal for high side switching applications. With a simple drive circuit referenced to ground, users can avoid the need for additional high side driver circuitry typically required when using an N-Channel MOSFET. This not only simplifies the design process but also helps reduce component count and overall costs. By utilizing this MOSFET, designers can create a complementary power output stage by pairing it with a corresponding N-Channel MOSFET, enabling the design of a power half bridge stage with a straightforward drive circuit

主な特長

  • Low quiescent current draw
  • Fast transition time
  • High-frequency stability
  • Precise parameter control

応用

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (Abs) (ID) 76 A
Drain Current-Max (ID) 76 A Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 298 W Pulsed Drain Current-Max (IDM) 230 A
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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