IXTN600N04T2
Advanced HiperFET PWR MOSFET module
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $32.353 | $32.35 |
200 | $12.521 | $2,504.20 |
500 | $12.080 | $6,040.00 |
1000 | $11.863 | $11,863.00 |
在庫:7,790
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXTN600N04T2
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTN600N04T2 データシート (PDF)
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Series : IXTN600N04
概要 IXTN600N04T2
Whether used in motor control, power inverters, or other high-current applications, the IXTN600N04T2 provides a cost-effective solution for optimizing power efficiency and performance. Trust in the quality and reliability of this silicon power MOSFET for your next project
主な特長
- International Standard Package
- miniBLOC, with Aluminium Nitride
- Isolation
- 175°C Operating Temperature
- Isolation Voltage 2500 V~
- High Current Handling Capability
- Fast Intrinsic Diode
- Avalanche Rated
- Low RDS(on)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | TrenchT2™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 600A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 590 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 40000 pF @ 25 V | Power Dissipation (Max) | 940W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXTN600 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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