SI2304DDS-T1-GE3
Specified for 30V operation, this MOSFET can handle up to 3.6A current with a power dissipation of 1.7W at 60mohm
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.080 | $0.40 |
| 50 | $0.070 | $3.50 |
| 150 | $0.065 | $9.75 |
| 500 | $0.062 | $31.00 |
| 3000 | $0.053 | $159.00 |
| 6000 | $0.051 | $306.00 |
在庫：9,516
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SI2304DDS-T1-GE3
-
パッケージ/ケース : SOT23-3
-
ブランド : Vishay
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : SI2304DDS-T1-GE3 データシート (PDF)
概要 SI2304DDS-T1-GE3
N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
主な特長
- Pulse width modulation compatibility
- High-differential-mode voltage rating
- Low distortion and noise performance
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 3.6 A | Rds On - Drain-Source Resistance | 60 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 6.7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 5 ns |
| Product Type | MOSFET | Rise Time | 12 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 5 ns | Part # Aliases | SI2304DDS-T1-BE3 SI2304DDS-GE3 |
| Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SI2393DS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
SI2333DDS-T1-GE3
SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A
SI7157DP-T1-GE3
-20V Vds and 12V Vgs MOSFET suitable for power management tasks
SI2305DS-T1-E3
RoHS Compliant Package-3
SI2323DS-T1-GE3
Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation
SI4410BDY-T1-E3
Small-signal Silicon MOSFET SI4410BDY-T1-E3, featuring an N-channel design, rated for 7500 mA and 30 V
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 MOSFET N-channel 25 volts 100 amps TDSON-8
SI1077X-T1-GE3
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6
BC846BQ-7-F
It features a compact SOT-23 package
PBSS2515E
PBSS2515E is an NPN Bipolar Transistor with a 0.5 A 15 V rating and an HFE of 90, designed for small signal applications
FQD2N60CTM
MOSFET TO-252 Power Field-Effect Transistor, characterized by its N-Channel design, capable of handling 1
ZVN4424G
Trans MOSFET N-CH 240V 0.5A Automotive 4-Pin(3+Tab) SOT-223
BTB16-600BRG
TRIAC 600V 168A 3-Pin(3+Tab) TO-220AB Tube
IKQ75N120CH3XKSA1
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
SPW21N50C3
N-Channel Silicon Transistor
T6420M
Industry-standard TO- package with compact footprint and ease of handlin
SI4946CDY-T1-GE3
VISHAY - SI4946CDY-T1-GE3 - MOSFET, DUAL N-CH, 60V, SOIC
SIS488DN-T1-GE3
MOSFET with low conduction resistance of 5.5mOhm at 10V, suitable for high power applications