SI3127DV-T1-GE3
MOSFET with a -60V Drain-to-Source Voltage and 20V Gate-to-Source Voltage in TSOP-6 package
在庫:7,298
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部品番号 : SI3127DV-T1-GE3
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パッケージ/ケース : TSOP-6
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Brand : Vishay
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3127DV-T1-GE3 データシート (PDF)
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Series : SI3127DV
概要 SI3127DV-T1-GE3
Introducing the SI3127DV-T1-GE3, a top-of-the-line small signal field-effect transistor that boasts a current rating of 5.1A and a maximum voltage of 60V. This P-channel transistor is expertly crafted from silicon and metal-oxide semiconductor material, offering exceptional performance and reliability in a variety of electronic setups. Encased in a MO-193AA package, this transistor is not only halogen-free but also RoHS compliant, ensuring eco-friendly operation and adherence to industry standards. With a compact TSOP-6 package design, the transistor is versatile and space-saving, making it a valuable component for efficient electronic designs
主な特長
- TrenchFET® power MOSFET 100 % Rg and UIS tested
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 5.1 A | Rds On - Drain-Source Resistance | 146 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 30 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 4.2 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay / Siliconix |
Configuration | Single | Height | 1.1 mm |
Length | 3.05 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Width | 1.65 mm | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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