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BSC050NE2LSATMA1

Single N-Channel power MOSFET with 25V voltage rating

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概要 BSC050NE2LSATMA1

Infineon Technologies' BSC050NE2LSATMA1 MOSFET stands out for its exceptional efficiency and power-handling capabilities. With a low RDS(on) of 2.5mΩ and a hefty current rating of 50A, this component minimizes conduction losses and maximizes overall system efficiency. Its thermal resistance of 0.45°C/W ensures efficient heat dissipation, crucial for maintaining optimal operating temperatures in rigorous applications. Packaged in a TO-263-7 housing, the BSC050NE2LSATMA1 offers not only superior thermal properties but also easy integration into various designs. Whether in industrial, automotive, or consumer electronics applications, this MOSFET from the OptiMOS 5 series delivers reliable performance and durability

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 25 V Id - Continuous Drain Current 58 A
Rds On - Drain-Source Resistance 4.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 14 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 28 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Fall Time 2 ns
Forward Transconductance - Min 38 S Height 1.27 mm
Length 5.9 mm Product Type MOSFET
Rise Time 2.2 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 11.4 ns Typical Turn-On Delay Time 2.5 ns
Width 5.15 mm Part # Aliases BSC050NE2LS SP000756340
Unit Weight 0.010582 oz

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    部品の品質保証: 365 日

    返品・返金：90日以内

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