BSZ065N06LS5ATMA1
N-type power metal-oxide-semiconductor field-effect transistor with 60V voltage rating and 14A current rating
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部品番号 : BSZ065N06LS5ATMA1
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パッケージ/ケース : TSDSON-8
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : BSZ065N06LS5ATMA1 データシート (PDF)
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Series : BSZ065N06LS5
概要 BSZ065N06LS5ATMA1
The BSZ065N06LS5ATMA1 by Infineon Technologies is a high-performance power MOSFET that is ideal for a variety of applications. With a voltage rating of 60V and a continuous drain current of 80A, this MOSFET is capable of handling high-power requirements with ease. Its low on-resistance of 6.5mΩ ensures minimal power losses, making it highly efficient for use in motor control, solar inverters, and uninterruptible power supplies
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 6.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V | Qg - Gate Charge | 10 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 46 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 2.6 ns | Forward Transconductance - Min | 25 S |
| Height | 1.1 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 2.9 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 5 ns | Width | 3.3 mm |
| Part # Aliases | BSZ065N06LS5 SP001385612 | Unit Weight | 0.001367 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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