BSZ068N06NSATMA1
High voltage MOSFET with trench technology
在庫：9,461
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : BSZ068N06NSATMA1
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パッケージ/ケース : TSDSON-8
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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日付シート : BSZ068N06NSATMA1 データシート (PDF)
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Series : BSZ068N06NS
概要 BSZ068N06NSATMA1
The BSZ068N06NSATMA1 is a top-of-the-line N-channel 60V Power MOSFET that stands out due to its exceptional performance capabilities. With a minimal on-resistance of 6.8mΩ at a Vgs of 10V, this MOSFET is ideal for applications that require high efficiency switching. Its ability to handle a drain current rating of 100A ensures that it can effortlessly manage heavy power loads without any issues
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 8.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V | Qg - Gate Charge | 17 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 46 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Series | OptiMOS 5 |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 3 ns | Forward Transconductance - Min | 20 S |
| Height | 1 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 3 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 7 ns | Width | 3.3 mm |
| Part # Aliases | BSZ068N06NS SP001067002 | Unit Weight | 0.001367 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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