IXTH120P065T
65V 120A P-Channel Power MOSFET
在庫：4,471
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXTH120P065T
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXTH120P065T データシート (PDF)
-
Series : IXTH120P065
概要 IXTH120P065T
Product IXTH120P065T is a Trench P-Channel MOSFET designed for high side switching applications. By using this MOSFET, designers can simplify their drive circuitry, as only a simple drive circuit referenced to ground is needed. This eliminates the need for additional high side driver circuitry, which can reduce component count and overall cost
主な特長
- Extreme temperature range
- Fast thermal response
- Low input current
- Reduced EMI radiation
応用
- Robust and durable
- Smart energy management
- Advanced technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
| Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 1000 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 65 V | Drain Current-Max (ID) | 120 A |
| Drain-source On Resistance-Max | 0.01 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 505 pF | JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T4 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 298 W | Pulsed Drain Current-Max (IDM) | 360 A |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
FDS7764A
Surface Mount MOSFET 30V 8-SOIC
APT50M50JVFR
Four-pin SOT-227 package
CLF1G0035-100P
Product CLF1G0035-100P is a 100W SOT-1228A MOSFET compliant with ROHS standards
IRLL2705PBF
Tube packaging of IRLL2705PBF N-channel Silicon Transistor MOSFET
BSM50GD120DN2G
High-Voltage IGBT Modules Suitable for Three-Phase Applications
BLF642,112
Discover BLF642,112, a robust MOSFET unit engineered to handle 35W power, housed in SOT-467C packaging and certified ROHS-compliant
MS1649
Compact, reliable, and energy-efficient solution for modern electronic system
STGD5NB120SZT4
Trans IGBT Chip N-CH 1200V 10A 75W 3-Pin(2+Tab) DPAK T/R
2N5157
Bipolar Transistors - BJT Power BJT
NJVMJD31CT4G
Transistor NPN 100V 3A for Automotive Applications