VS-FB180SA10P
SOT-227 Packaged N-Channel MOSFET Suitable for High-Power Switching, Rated at 100V Voltage and 180A Continuous Current, Equipped with Four Pins
在庫:9,688
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : VS-FB180SA10P
-
パッケージ/ケース : SOT-227-4
-
Brand : Vishay General Semiconductor - Diodes Division
-
Components Classification : Single FETs, MOSFETs
-
日付シート : VS-FB180SA10P データシート (PDF)
概要 VS-FB180SA10P
N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227
主な特長
- Easy to use and parallel
- Dynamic dv/dt rating
- Fully avalanche rated
- Simple drive requirements
- Low drain to case capacitance
- Low internal inductance
応用
- Industrial
- Commercial
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Obsolete |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 6.5mOhm @ 180A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 25 V |
Power Dissipation (Max) | 480W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Supplier Device Package | SOT-227 |
Package / Case | SOT-227-4, miniBLOC | Base Product Number | FB180 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![VS-GB90DA120U](/img/package/sot.jpg)
VS-GB90DA120U
62W SOT227 IGBT module 1200V 149A
![VS-GA250SA60S](/img/package/sot.jpg)
VS-GA250SA60S
Product Details: The VS-GA250SA60S IGBT module is engineered with N-channel architecture
![AVS08CB](/img/package/to220ab.jpg)
AVS08CB
AVS08CB, labeled as a 'Triacs Auto Voltage Switch', is engineered for automatic voltage adjustment
![VS-GA200SA60UP](/img/package/sot.jpg)
VS-GA200SA60UP
IGBT transistors, operating as N-channel devices, designed to handle up to 600 volts and 100 amps of current
![VS-GT100DA120U](/img/package/sot.jpg)
VS-GT100DA120U
This N-Channel IGBT module
![VS-50MT060WHTAPBF](/img/package/module.jpg)
VS-50MT060WHTAPBF
114 A max, 600 V
![VS-GT175DA120U](/img/package/sot.jpg)
VS-GT175DA120U
Module Trans IGBT N-CH 1200V 288A 1087000mW
![VS-GP250SA60S](/img/package/sot.jpg)
VS-GP250SA60S
4-Pin SOT-227 Trans IGBT Module N-CH 600V 380A 893mW
![VS-GB50NA120UX](/img/package/sot.jpg)
VS-GB50NA120UX
Transistor IGBT module for industrial applications
![VS-100MT060WSP](/img/package/mt200.jpg)
VS-100MT060WSP
IGBT Modules Output & SW Modules - MTP SWITCH-e3
![C3M0280090J](/img/package/to263.jpg)
C3M0280090J
MOSFET G3 made of silicon carbide with a low on-state resistance of 280 milliohms and a voltage rating of 900V
![JAN2N2222AUB](/img/package/lcc.jpg)
JAN2N2222AUB
Certified for RoHS Compliance
![MTB23P06V](/img/package/to263.jpg)
MTB23P06V
HIGH VOLTAGE CAPABLE 23A TRANSISTOR
![IGW30N100T](/img/package/to247.jpg)
IGW30N100T
IGBT 1000V, 60A, TO-247-3
![NTMD3P03R2G](/img/package/soic8.jpg)
NTMD3P03R2G
Dual P−Channel SOIC−8 Power MOSFET capable of handling 3.05 Amps and operating at -30 Volts
![SQ2318AES-T1-GE3](/img/package/sot23.jpg)
SQ2318AES-T1-GE3
High-Power Field-Effect Transistor with 8A Drain Current, 40V Voltage Rating, 0
![FGH60N6S2](/img/package/to247.jpg)
FGH60N6S2
Single 600V N-Channel motor, motion, and ignition control solutions
![SPD09P06PL](/img/package/to252.jpg)
SPD09P06PL
The SPD09P06PL MOSFET is engineered as a P-channel variant, suitable for applications requiring a maximum voltage of 60V and a peak current of 9
![IXFN24N100](/img/package/sot.jpg)
IXFN24N100
IXFN24N100 MOSFET with N-type polarity in SOT-227B housing
![NVMFS6H848NLT1G](/img/package/so5.jpg)
NVMFS6H848NLT1G
Trench MOSFET 80 Volt Low-Loss SO-8 Flat Lead