IXFX27N80Q
|
High Performance N-Channel MOSFET Discrete Component, 27A 800V |
Ixys Integrated Circuits Division |
6,862 |
|
IXTH10P50P
|
P-Channel TO-247 MOSFET |
Ixys Integrated Circuits Division |
9,822 |
|
IXTX90P20P
|
P-Channel 200 V 90 A 44 mOhm Through Hole PolarP Power Mosfet -PLUS247 |
Ixys Integrated Circuits Division |
8,504 |
|
IKQ75N120CH3XKSA1
|
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package |
Infineon Technologies |
6,544 |
|
IRFP22N60KPBF
|
Trans MOSFET N-CH 600V 22A |
Siliconix |
3,782 |
|
IKQ120N60TXKSA1
|
Trans IGBT Chip N-Channel 600V 160A 833W TO-247 |
Infineon Technologies |
8,993 |
|
IXTX32P60P
|
32 Amps MOSFET with 600V and 0.350 Rds |
Ixys Integrated Circuits Division |
5,397 |
|
STW17N62K3
|
N-Channel Silicon Power MOSFET with 15A current rating, 620V voltage rating, and 0.38ohm resistance in a TO-247 package |
Stmicroelectronics |
9,613 |
|
IXFH14N100Q2
|
IXFH14N100Q2 - MOSFET with 14 Amps and 1000V, featuring 0.90 Rds |
Ixys Integrated Circuits Division |
6,047 |
|
SIHG22N60E-GE3
|
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package |
Siliconix |
6,807 |
|
IXFH50N50P3
|
Field-Effect Transistor for Power Applications - IXFH50N50P3 |
Ixys Integrated Circuits Division |
8,641 |
|
DSEE30-12A
|
Rectifier Diode, 30A, 1200V V(RRM), Silicon, TO-247AD |
Ixys Integrated Circuits Division |
7,042 |
|
IXFX420N10T
|
N-channel MOSFET with a voltage rating of 100V and a current rating of 420A in a PLUS247-3 package |
Ixys Integrated Circuits Division |
7,272 |
|
IXFX230N20T
|
230A 200V MOSFET |
Ixys Integrated Circuits Division |
9,446 |
|
IRFP460BPBF
|
Vishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC |
Siliconix |
9,174 |
|
IRFPE50PBF
|
N-channel MOSFET,IRFPE50 7.8A 600V |
Siliconix |
6,099 |
|
APT40SM120B
|
1.2KV SiC N-channel Power MOSFET with a current rating of 41A and TO-247 package |
Microchip Technology |
5,012 |
|
IXTX110N20L2
|
960W Power Dissipation |
Ixys Integrated Circuits Division |
5,757 |
|
IXTH16P60P
|
Transistor MOSFET P-channel with 600V and 16A in TO-247AD package |
Ixys Integrated Circuits Division |
8,175 |
|
IXXH75N60B3D1
|
Trans IGBT Chip |
Ixys Integrated Circuits Division |
7,675 |
|
IXFX64N60P
|
1-Element PLUS247 |
Ixys Integrated Circuits Division |
8,133 |
|
IXFH60N50P3
|
High voltage MOSFET with 60A current rating |
Ixys Integrated Circuits Division |
7,638 |
|
IRFPS37N50APBF
|
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R |
Infineon Technologies |
6,880 |
|
IXFH46N65X2
|
TO-247AD N-Ch Ultra Junction X2 Class Power MOSFET |
Ixys Integrated Circuits Division |
5,358 |
|
IXFH34N65X2
|
Transistor for high-voltage power switching |
Ixys Integrated Circuits Division |
7,373 |
|
TIP140G
|
TIP140G - Bipolar Power Transistor rated for 10 A and 60 V, NPN Darlington configuration |
Onsemi |
6,938 |
|
MUR3020WTG
|
The Ultrafast Rectifier is ideal for applications in switching power supplies and inverters |
Onsemi |
7,341 |
|
MBR6045WTG
|
60A, 45V Schottky Barrier Rectifier in a TO-247 package with 30-tube packaging |
Onsemi |
5,116 |
|
IXFH42N20
|
Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins |
Ixys Integrated Circuits Division |
6,945 |
|
IXFH75N10
|
TO-247AD MOSFETs with ROHS |
Ixys Integrated Circuits Division |
9,893 |
|
IXFH20N80P
|
The MOSFET is commonly used for high power switching and amplification in electronic circuits |
Ixys Integrated Circuits Division |
6,262 |
|
IXFH26N50Q
|
TO-247AD Plastic Package-3 |
Ixys Integrated Circuits Division |
5,213 |
|
IXFH40N30Q
|
IXFH40N30Q, 1-Element |
Ixys Integrated Circuits Division |
5,423 |
|
IXFH6N100
|
MOSFETs TO-247AD ROHS |
Ixys Integrated Circuits Division |
6,946 |
|
IXFH15N80Q
|
High-power N-Channel Transistor |
Ixys Integrated Circuits Division |
7,607 |
|
IXFX20N120P
|
N-Channel MOSFET with 1.2KV Vds and 20A Id packaged in PLUS247-3 |
Ixys Integrated Circuits Division |
9,426 |
|
IXFX44N60
|
Through Hole Single N-Channel Power Mosfet - 600 V, 560 W, 330 nC |
Ixys Integrated Circuits Division |
9,399 |
|
ARF460BG
|
Tube packaging for ARF460BG RF power MOSFET with N-channel type and 500V maximum voltage rating |
Microchip Technology |
8,202 |
|
APT14M120B
|
Powerfully built TO-package for maximum performance and safet |
Microchip Technology |
4,578 |
|
APT5020BVFRG
|
The APT5020BVFRG MOSFET is an N-channel device in TO-247-3 package, compliant with ROHS standards |
Microchip Technology |
9,785 |
|
APT47N60BC3G
|
channel transistor, high voltage semiconductor, TO-247 package |
Microchip Technology |
5,632 |
|
NGTB40N120SWG
|
1200V/40A IGBT optimized for welding purposes |
Onsemi |
6,273 |
|
IXBH32N300
|
TO-247AD 3-Pin IGBT Chip for N-Channel Transistor with 3000V 80A 400W |
Ixys Integrated Circuits Division |
5,841 |
|
IXBH16N170A
|
150 Watt 16 Amp 1.7kV TO-247AD IGBTs ROHS |
Ixys Integrated Circuits Division |
7,961 |
|
NGTB25N120FLWG
|
Trans IGBT Chip with a N-Channel, 1200V and 50A rating |
Onsemi |
9,412 |
|
FGH75N60UFTU
|
FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage |
Onsemi |
5,986 |
|
FGH40N65UFDTU
|
Field Stop IGBT 650V 80A 1.8V TO247 |
Onsemi |
6,391 |
|
MSC750SMA170B
|
SIC MOSFET, TO-247, MOSFET UNRLS, FG |
Microchip Technology |
8,624 |
|
IXCH36N250
|
2500V N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 73A, 595W, TO-247 Package |
Ixys Integrated Circuits Division |
7,970 |
|
IXGH48N60C3
|
High-voltage switching device with 48A current capacity |
Ixys Integrated Circuits Division |
6,808 |
|